WPM2037 single p-channel, -20v, -3.6a , power mosfet descriptions the WPM2037 is p-channel enhancement mos field effect transistor. uses advanced trench technology and desig n to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WPM2037 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-23-6l applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sot-23-6l pin configuration (top view) 2037 = device code yy = year ww = week marking order information device package shipping WPM2037-6/tr sot-23-6l 3000/reel&tape v ds (v) rds(on) (
) 0.047@ v gs = " 4.5v 0.060@ v gs = " 2.5v -20 0.076@ v gs = " 1.8v g s d 1 2 654 3 d dd 2037 yyww 6 5 4 1 2 3 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds -20 gate-source voltage v gs 12 v t a =25c -3.6 -3.3 continuous drain current a t a =70c i d -2.9 -2.7 a t a =25c 1.1 0.9 maximum power dissipation a t a =70c p d 0.7 0.6 w t a =25c -3.3 -3.1 continuous drain current b t a =70c i d -2.7 -2.4 a t a =25c 0.9 0.8 maximum power dissipation b t a =70c p d 0.6 0.5 w pulsed drain current c i dm -20 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t ? 10 s 90 108 junction-to-ambient thermal resistance a steady state r ja 112 128 t ? 10 s 110 128 junction-to-ambient thermal resistance b steady state r ja 132 152 junction-to-case thermal resistance steady state r jc 50 68 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. WPM2037 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = -250ua -20 v zero gate voltage drain current i dss v ds =-16 v, v gs = 0v -1 ua gate-to-source leakage current i gss v ds = 0 v, v gs = 12v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = -250ua -0.35 -0.58 -1.0 v v gs = -4.5v, i d = -3.2a 47 61 v gs = -2.5v, i d = -2.8a 59 71 drain-to-source on-resistance r ds(on) v gs = -1.8v, i d = -2.3a 77 94 m ? forward transconductance g fs v ds = -5.0 v, i d = -3.6a 10 s charges, capacitances and gate resistance input capacitance c iss 1130 output capacitance c oss 120 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = -10 v 115 pf total gate charge q g(tot) 11 threshold gate charge q g(th) 0.6 gate-to-source charge q gs 1.3 gate-to-drain charge q gd v gs = -4.5 v, v ds = -10 v, i d = -2.7a 2.7 nc switching characteristics turn-on delay time td(on) 9.5 rise time tr 5.8 turn-off delay time td(off) 54 fall time tf v gs = -4.5 v, v ds = -6 v, r l =3 ? , r g =6 ? 13 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = -1.0a -0.75 -1.5 v WPM2037 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) 012345 0 5 10 15 20 vgs=-3.0 ~ -4.5v vgs=-2.0v vgs=-2.5v vgs=-1.5v -i ds -drain-to-source current (a) -v ds -drain-to-source voltage(v) vgs=-1.0v output characteristics on-resistance vs. drain current on-resistance vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4 8 12 16 20 v ds = -5v t=125 o c transfer characteristics on-resistance vs. gate-to-source voltage threshold voltage vs. temperature t=25 o c t=-50 o c -i ds -drain to source current(a) -v gs -gate-to-source voltage(v) 24681 20 40 60 80 100 0 v gs =-4.5v v gs =-2.5v r ds(on) - on-resistance(m : ) -i ds -drain-to-source current(a) 1.01.52.02.53.03.54.04.55. 0 40 50 60 70 80 i ds =-3.2a r ds(on) - on-resistance (m : ) -v gs -gate-to-source voltage(v) -50 -25 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 0.7 0.8 i ds =-250ua -v gs(th) gate threshold voltage (v) temperature ( o c) -50 -25 0 25 50 75 100 125 150 20 30 40 50 60 70 80 v gs =-4.5v,id=-3.2a r ds(on) - on-resistance (m : ) temperature( o c) WPM2037 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance single pulse power body diode forward voltage safe operating area 0 4 8 12 16 20 0 250 500 750 1000 1250 1500 1750 v gs =0v f=1mhz ciss coss crss c - capacitance(pf) -v ds drain-to-source voltage (v) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.3 0.6 0.9 1.2 1.5 t=25 o c t=150 o c -i sd -source to drain current(a) -v sd -source-to-drain voltage(v) 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) power (w) t j(max) =150c t a =25c 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -i d (amps) 100 p s 10ms 1ms dc t j(max) =150c, t a =25c 100m 1s 10s r ds(on) limited transient thermal response (junction-to-ambient) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 112 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm wpm203 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot-23-6l dimensions in millimeter symbol min. typ. max. a 1.050 1.150 1.250 a1 0.000 0.050 0.100 a2 1.050 1.100 1.150 b 0.300 0.400 0.500 c 0.100 0.150 0.200 d 2.820 2.920 3.020 e 1.500 1.600 1.700 e1 2.650 2.800 2.950 e 0.950(bsc) e1 1.800 1.900 2.000 l 0.300 0.600 ? 0 e 8 e WPM2037 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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